Aviza Technology, a supplier of advanced semiconductor capital equipment and process technologies for the global semiconductor industry and related markets, has announced that it has been awarded U.S. Patent No. 7,153,580 entitled "Low-k Dielectric Inorganic/Organic Hybrid Films and Method of Making" for organosilicon-based silicon-organic-carbon (SiOC) films targeted at intermetal dielectric films containing very low dielectric constant values.
"Aviza has a deep portfolio of unique IP that spans multiple technologies," said Nitin Shah, Vice President of Business Development of Aviza Technology, Inc. "We believe that the addition of this latest low-k patent, along with previously issued patents in this area, enhances our overall IP portfolio. We also believe that the suite of low-k patents granted to Aviza will be of significant interest and benefit to chipmakers and semiconductor equipment manufacturers focusing on low-k deposition technologies, as Aviza's patented processes related to this technology virtually spans the entire spectrum of low-k manufacturing. As a result, Aviza is pursuing active licensing programs for our technology."
This new patent covers dielectric films for structures comprised substantially of cyclic Si-O-Si groups and chains as well as organic side groups attached to the structures. The films may be formed in thermal- or plasma-based systems, which utilize organosilicon precursors.
