ANADIGICS and Kunshan New and Hi-Tech Industrial Development Zone Break Ground for GaAs Wafer Fabrication Facility in China
(Interviews, 12 Jul 2007 )
ANADIGICS Inc. recently broke ground for the construction of a new state-of-the-art 6-inch gallium arsenide (GaAs) integrated circuit (IC) wafer fabrication facility (fab) in the Kunshan New and Hi-Tech Industrial Development Zone (KSND) as part of a city wide celebration in the city of Kunshan in the Jiangsu Province in mainland China.
To support ANADIGICS' anticipated growth beyond its primary wafer fabrication located in Warren, NJ, the company and KSND aim to complete construction of the facility in the first half of 2008, and to bring the fab operational in the latter part of the year.
KSND is comprised of three sections within the city, involving many new and hi-tech industries including; auto electronics, solar energy, robotics, and new materials. Located in Section B of the development zone, ANADIGICS will take on the flagship role for the compound semiconductor industry development.
