Axon awarded key patent on resistance-change memory technology
(Business News, 22 May 2008 )
Axon Technologies has been awarded U.S. Patent number 7,372,065 for employing commonly used semiconductor materials copper and silicon dioxide to form Programmable Metallization Cell (PMC) memory devices. PMC is a resistance-change, non-volatile memory technology that features a significantly lower power profile than conventional devices, such as Flash. PMC is considered ideal for a broad range of applications, including energy-saving computing, personal entertainment and mobile communications.
"This is the 27th US patent that has been issued to Axon relative to our PMC technology, and represents what we believe will be many oxide-based patents to emanate from Axon," said Dr. Michael Kozicki, founder of Axon and co-inventor of the technology. “Copper and silicon dioxide have been used in the semiconductor industry for many years, and PMC technology is compatible with existing back-end processes and equipment sets. This greatly lowers the manufacturing barrier for PMC technology and opens up a huge range of low-cost discrete and embedded memory applications.”
