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August 30, 2008

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Power MOSFET has low on-resistance

( 01 Jun 2008 )

An advanced architecture and package design allow the NP180N04TUG power MOSFET a 1.5-mΩ maximum on-resistance and operates at a 40V drain-to-source voltage and 180A. Rated for single- and repetitive-avalanche energy, the power MOSFET operates at 175°C at a 10V gate voltage and a 40V drain voltage. Available in ROHS (restriction-of-hazardous-substances)-compliant packages.

NEC Electronics America, www.am.necel.com

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