Vishay Releases First Gen. 5.0 High-Performance 45-V Schottky Diodes Offering Maximum Junction Temperature to +175ーC
(Technology News, 23 Jul 2008 )
Vishay Intertechnology has launched two new Gen. 5.0 High-Performance 45-V Schottky diodes that are the industry's first such devices to offer maximum junction temperature to +175ーC. Built on sub-micron trench technology, the 30CTT045 and 60CPT045 devices offer extremely low forward voltage drop and low reverse leakage, allowing designers to increase power density in automotive and other high-temperature applications.
The two Schottky diodes released today feature very low maximum forward voltage drops at +125ーC of <0.50V typical at 30A for the 2 x 30A 60CPT045, and <0.50V typical at 15A for the 2 x 15A 30CTT045. Reverse leakage at +125ーC is an extremely low 5mA and 2mA for these respective devices, with very tight parameter distribution. Both devices offer optimized VF versus IR trade-off for increased system efficiency.
The 30CTT045 and 60CPT045 are optimized for ac-to-dc secondary rectification, flyback, buck and boost converters, half-bridge, reverse battery protection, freewheeling, class-D amplifiers, and dc-to-dc module applications. Typical end products include high power density SMPS; adaptors for desktop PCs; servers; automotive drives and controls; consumer electronics like PDPs, LCDs, and high-efficiency audio systems; and mobile electronics such as notebook computers, cell phones, and portable media players.
For designers, the new devices are offered in small RoHS-compliant packages for improved cost-to-power ratios, with RBSOA available for tight and cost-effective designs. The 30CTT045 is offered in the TO-220 package, while the 60CPT045 is offered in the TO-247.
A high and stable breakdown voltage (>57V typical) accommodates voltage spikes and optimizes power density, which is increased in the diodes by 25%. The devices feature 40% increased ruggedness for reverse avalanche capability, with parts 100% screened in avalanche, and negligible switching losses.