250A Power MOSFET Combining Package and Process Advances for Higher Motor-Drive Efficiency
(Product News, 04 Aug 2008 )
Taking aim at reduced operating costs and lowering the environmental footprint in applications such as electric vehicles, STMicroelectronics has introduced a 250A surface-mount power MOSFET with the lowest on-resistance in the market, to minimize energy conversion losses and enable higher performance.
The new device, the STV250N55F3, is the first power MOSFET to combine ST’s PowerSO-10™ package with ribbon bonding to achieve ultra-low die-free package resistance. Implemented in ST’s high-density STripFET III™ fabrication process, the device offers a typical on-resistance of 1.5 milliohms. Further benefits of STripFET III include low switching losses and rugged avalanche characteristics. The nine-lead source connection also reduces on-resistance, in addition to aiding heat dissipation. Overall, the package is rated for 300W dissipation at 25 degrees C.
The high current rating allows engineers to design-out multiple parallel MOSFETs to save board space and BOM costs. Standard driving thresholds also simplify driver-circuit design. The STV250N55F3 is rated for applications up to 55V.
The ability to operate at temperatures up to 175 degrees C makes the STV250N55F3 suitable for use in high-current electric-traction applications such as forklift trucks, golf carts and pallet trucks, as well as lawnmowers, wheelchairs, and electric bikes. Reliability and robustness are assured through 100% avalanche testing both at wafer level as well as on finished products. In the future, the device will be eligible for automotive-grade applications.
Within the same family, ST also has the 55V STV200N55F3, which implements a four-lead source connection and is rated for 200A continuous drain current.
