IR Introduces GaN-based Power Device Technology Platform
(Technology News, 18 Sep 2008 )
International Rectifier Corporation (IR) announced the successful development of a revolutionary gallium nitride (GaN)-based power device technology platform that can provide customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology platforms to dramatically increase performance and cut energy consumption in end applications in a variety of market segments such as computing and communications, automotive and appliances.
The pioneering GaN-based power device technology platform is the result of five years of research and development by IR based on the company’s proprietary GaN-on-silicon epitaxial technology.
IR's GaN-based power device technology platform enables revolutionary advancements in power conversion solutions. The portfolio of system solution products and related intellectual property (IP) extends far beyond leading-edge discrete power devices by effectively deploying the company's 60-year heritage in power conversion expertise in a wide variety of applications including AC-DC power conversion, DC-DC power conversion, motor drives, lighting, high density audio and automotive systems.
The high throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IR's cost effective silicon manufacturing facilities, offers customers a world-class, commercially viable manufacturing platform for GaN-based power devices.
"This leading-edge GaN-based technology platform and IP portfolio extends IR's leadership in power semiconductor devices and heralds a new era for power conversion, in line with our core mission to help our customers save energy," said IR's President and Chief Executive Officer, Oleg Khaykin.
