IR Launches Industry’s First GaN-based Integrated Power Stage Devices

International Rectifier (IR) has released what is said to be the industry’s first family of commercial integrated power stage products utilizing the company's revolutionary gallium nitride (GaN)-based power device technology platform. The iP2010 and iP2011 family of devices is designed for multiphase and point-of-load (POL) applications including servers, routers, switches and general purpose POL DC/DC converters.

The iP2010 and iP2011 integrate a highly sophisticated, ultra fast PowIRtune driver IC matched to a multi-switch monolithic GaN-based power device. These devices are mounted in a flip chip package platform to deliver higher efficiency and more than double the switching frequency of state-of-the-art silicon-based integrated power stage devices.

The iP2010 features an input voltage range of 7V to 13.2V and output voltage range of 0.6V to 5.5V with an output current up to 30A. The device operates up to 3MHz. Operating up to 5MHz, the pin-compatible iP2011 features the same input and output voltage range but is optimized for an output current up to 20A.

Available in an LGA package with small footprint, both devices are optimized for very low power loss, feature highly efficient dual-sided cooling, and are RoHS compliant.

GaNpowIR

International Rectifier


RELATED ARTICLES
GaN-based Technology: A New Game in Conversion Electronics

IC Delivers Greater AC/DC Power Converter System Efficiencies

Integrated Voltage Regulator Maximizes System Efficiency for DC/DC Applications