High-power RF CMOS switch uses high-resistivity silicon substrates

RF Micro Devices’ (RFMD) high-power RF CMOS switch uses high-resistivity silicon substrates and features RFMD’s patent-pending design and circuit-related technology. The devices exceed the stringent linearity and isolation requirements of next-generation 3G and 4G smartphones while providing superior ESD performance. Apart from that, the device integrates the controller and RF switch on the same circuit, reducing the size while improving the performance. According to RFMD, the silicon switches deliver a lower cost solution than is obtainable from competing silicon process technologies, including silicon-on-sapphire (SOS).


RFMD’s CMOS-based cellular switch family includes the RF1603, a single-pole, triple-throw (SP3T) switch, and the RF1604, a single-pole quad-throw (SP4T) switch. Commercial production of the devices is expected to commence in the first half of 2010.

RF Micro Devices Inc.
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RFMD’s high-power RF CMOS switch uses high-resistivity silicon substrates and delivers a lower cost solution than is obtainable from competing silicon process technologies, including silicon-on-sapphire (SOS).