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| ( 01 Jul 2010 ) |
| By Stephen Las Marias, Editor, EDN Asia |
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Fairchild Semiconductor has launched a portfolio of high-performance MicroFET MOSFETs that comes in an ultra-compact, thin footprint of 1.6x 1.6x0.55mm, targeted at portable devices. The new portfolio contains a number of commonly used topology choices, including single P-channel and Schottky diode combo, single N-channel and Schottky diode combo, dual P-channel, dual N-channel, complementary pair, single N-channel and single P-channel.
 These MicroFET MOSFETs utilizes Fairchild’s advanced-performance PowerTrench MOSFET process technology, which yields exceptionally low values for RDS(ON), total gate charge (QG) and Miller Charge (QGD), enabling improved conduction and switching performance, and excellent thermal efficiencies. In addition, the MicroFET packaging delivers excellent power dissipation and conduction loss characteristics compared to conventional MOSFET packaging.
Fairchild Semiconductor
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