Elpida Develops 30nm 2Gb DDR3 SDRAM

Elpida Memory Inc. has completed development of a 2Gb DDR3 SDRAM on 30nm-level advanced process migration technology, which enabled 45 percent more chips per wafer compared with the company's 40nm process. This new process design developed by Elpida is also expected to help contain rising chip costs associated with process migration.

Elpida's new chip meets the JEDEC specifications for high-speed DDR3-1866 and 1.35V low-voltage, high-speed DDR3L-1600 memory chips, both expected to become mainstream industry products in 2011. Also, the 30nm DDR3 SDRAM is eco-friendly; it achieves one of the industry's lowest levels of electric current usage (15 percent less operating, and about 10 percent less standby usage compared with Elpida's 40nm products), reducing PC and digital consumer electronics power consumption.

Elpida plans to begin sample shipments of the newly developed DDR3 SDRAM in December 2010. Volume production is expected to commence in the same month.

Elpida

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