Ultratech Laser Annealing System Targets 28nm Node and Beyond

Ultratech Inc. has released its new field-tested LSA101 laser spike annealing (LSA) system, which enables critical millisecond annealing applications for the 28nm node and beyond.

The LSA101 features a new, state-of-the-art design of coherent optics, which generates a longer, more focused laser beam at the wafer plane, providing the capability to increase throughput by approximately 200 percent compared to its predecessor, the LSA100A. This dramatic improvement in throughput gives a corresponding approximate 65 percent reduction in cost of ownership.

The LSA101 also extends the ability to decrease the annealing time by approximately a factor of two compared to the LSA100A, which has been demonstrated to be critical for stress reduction in advanced technology nodes where many IC manufacturers are using aggressive strain engineering. Currently, the LSA101 is being qualified for 28nm production by a customer in Asia.

The LSA101 also has a wider operating range for annealing time, or dwell time, which is critical for stress management in advanced devices. The LSA101 has a minimum dwell time of 200µs compared to 400µs of the LSA100A.

Ultratech