4DS and SEMATECH Collaborate on Next-gen Non-volatile Memory Devices

4DS Inc. has joined SEMATECH's Front End Processes (FEP) to partner on efforts in non-volatile memory technology development. 4DS will closely collaborate with engineers from SEMATECH's memory program to build a full transistor-memory to demonstrate a working prototype of a low power RRAM device based on 4DS' proprietary material processes and device structures.

RRAM is a next generation non-volatile memory gaining momentum with industrial and academic efforts worldwide. RRAM is attractive as a replacement for FLASH memory and as a complement for non-volatile memory applications due to its speed, power profile and scaling. One of the published obstacles in deploying robust RRAM has been establishing a stable memory element. The race to develop circuits has left a gap for development of reliable materials and deposition techniques for low cost manufacturing.

The 4DS platform for non-volatile memory is a low temperature CMOS compatible, back end of line (BEOL) process with a simple structure that requires significantly fewer mask steps than FLASH memory. It potentially operates with significantly lower power and writes faster than conventional flash memories. The Company spent years developing materials and processes with a promising combination of simplified structures for manufacturing with low power performance. The 4DS team is comprised of Silicon Valley veterans in material science, processing, equipment and memory device engineering. "This novel structure and simplified process reflects 4DS know-how in materials processing and manufacturing," said 4DS' Chief Scientist, Dongmin Chen, a nanoscale quantum physicist and former Harvard Rowland Institute Fellow. "The SEMATECH collaboration will produce further validation of the 4DS offering."

4DS

SEMATECH