IR Unveils Ultra-Compact PQFN2x2 Power MOSFETs for Low Power Applications

International Rectifier (IR) has extended its packaging portfolio with the introduction of a PQFN 2x2mm package featuring IR's HEXFET MOSFET silicon that delivers an ultra-compact, high density and efficient solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras, and notebook PC, server and network communications equipment.

Featuring a footprint of just 4mm², the PQFN2x2 devices, which are available in 20V, 25V and 30V with standard or logic level gate drive, utilize IR's low voltage N-Channel and P-Channel silicon technologies to offer very low on-resistance (RDS(on)), and high power density in line with a PQFN3.3x3.3 or PQFN5x6 package.

The PQFN2x2 family includes P-Channel devices optimized for use in the high-side of load switches, providing a simpler drive solution. Featuring a low profile of less than 1mm, the devices are compatible with existing surface mount techniques, feature industry-standard footprint and are RoHS compliant.

International Rectifier