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| (Product News, 21 Jul 2011 ) |
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Ramtron International Corp. has announced broad sampling of its ferroelectric random access memory (F-RAM) built on its manufacturing line at IBM Corp. The FM24C64C is a 64kb, 5V serial F-RAM device that performs at bus speed without write delays, and supports up to one-trillion (1e12) read/write cycles – a million times more than a comparable EEPROM device.
The FM24C64C offers low power operation with 100µA active current (at 100kHz) and only 4µA typical standby current. This F-RAM device is a direct hardware replacement for 64kb EEPROM and is ideal for nonvolatile memory applications that require frequent or rapid writes.
“The FM24C64C expands our family of low-density serial I2C devices manufactured on our IBM manufacturing line in Burlington, Vermont,” comments Ramtron Marketing Manager Mike Peters. “The FM24xxC line of products includes 4kb, 16kb and 64kb serial devices with an I2C interface. Ramtron’s F-RAM products offer superior write performance, endurance and retention over competing devices.”
The FM24C64C features a serial I2C interface and performs up to 1MHz bus frequency. The device is a direct drop-in replacement for 64kb serial EEPROM and is frequently used in industrial controls, metering, medical, military, gaming, and computing applications, among others. The FM24C64C is offered in an industry standard, RoHS compliant 8-pin SOIC package and operates over the industrial temperature range of -40°C to +85°C.
Ramtron
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