Fujitsu Develops SPI FRAM in 0.18μm Technology

Fujitsu Semiconductor Asia Pte Ltd (FSAL) is now sending out samples of its recently developed SPI FRAM (ferroelectric random access memory) devices to customers. The FRAM ICs, based on Fujitsu’s 0.18μm process technology, represent the end of the migration process from 0.35μm, and feature EEPROM compatible package.

Under the MB85RSxxx family are the MB85RS256A, MB85RS128A and MB85RS64A devices, densities of 256kb, 128kb, and 64kb, respectively. They operate within the 3V and 3.6V voltage range and have an endurance of 10 billion write/read cycles as well as data retention for 10 years at 55°C.



Fujitsu has increased the operating frequency to a maximum of 25MHz; and because FRAM devices render voltage boosters unnecessary for the writing process, the new memory ICs are suited to low power applications.

Fujitsu has also released FRAM standalone devices with I²C as well as parallel interfaces, with memory densities ranging from 16kb to 4Mb.

The SPI FRAM devices are offered in 8-pin plastic SOP packages with standard memory pin assignment.

Fujitsu Semiconductor Asia