Low-loss silicon carbide power device integrated with conversion circuit

Renesas Electronics Corp. has announced the availability of three silicon carbide (SiC) compound power devices, the RJQ6020DPM, RJQ6021DPM, and RJQ6022DPM, which incorporate multiple SiC diodes and multiple power transistors in a single package to compose a power converter or switching circuit. SiC is a new material that is effective in reducing loss, and are intended for use in home appliances such as air conditioners, PC servers, and power electronics such as solar power generation systems.

The new products have a voltage tolerance of 600V and use an SiC diode based on low-leakage SiC-SBD technology developed jointly by Hitachi and Renesas. They combine low loss and compactness, and are available in a fully molded TO-3P package with a 5-pin configuration and pin assignments optimized for specific applications.

Samples of Renesas' new SiC compound power devices are now available for $10 per unit. Mass production is scheduled to start in May 2012.


Renesas Electronics Corp.