2nd gen power MOSFET increases efficiency in power converters
( 01 Sep 2005 )
STMicroelectronics has introduced devices built using the second generation of the company’s MDmesh highvoltage power MOSFET technology. Suited to SMPS (Switch Mode Power Supplies), Power Factor Correction (PFC) and power adapters, these devices offer greater efficiencies than the first generation MDmesh products, enabling better cost reductions and increased system reliability in new power-converter designs. MDmesh II’s enhancements of the p-strip array have delivered a reduction of up to 40% in the RDS(ON) resistance value compared to the previous MDmesh generation, without sacrificing tight control of its temperature dependence. Further optimization of the gate finger and oxide layer in the overlaid horizontal source strips ensure perfect control of the internal gate resistance and intrinsic capacitances.
