Trench MOSFETs for efficient power management systems
( 01 Jul 2004 )
International Rectifier's five logic-level trench HEXFET power MOSFETs contain all the features of IR's standard gate trench devices and meet gate drive requirements as low as 4.5V.
The fabrication process used enables minimum device on-resistance with lower temperature coefficient and avalanche capability required by the harsh automotive environment. This enables a shift from larger-packaged devices such as D2Pak to smaller D-Pak devices, reducing power dissipation and system size.
The MOSFETs feature improved efficiency, switching performance, ruggedness and lower gate charge. All devices are Q101-qualified and rated for both single-pulse and repetitive avalanche up to the maximum junction temperature of 175¡C.
IRLR024Z, $0.50; and IRL1404ZS, $1.60 (both 10,000).
International Rectifier Fax 852-2540-5835 www.irf.com
International Rectifier's five logic-level trench HEXFET power MOSFETs contain all the features of IR's standard gate trench devices and meet gate drive requirements as low as 4.5V. 
