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IBM and Infineon develop advanced MRAM technology

( 01 Sep 2003 )

IBM and Infineon Technologies have integrated magnetic memory components into a high-performance logic base and developed what they claim as "the most advanced magnetic random access memory (MRAM) technology to date."
Both companies believe that this development would accelerate the commercialization of MRAM, and have the potential to replace some of today's memory technologies as early as 2005. MRAM could lead to "instant-on" computers, allowing users to turn computers on and off as quickly as a light switch.
The high-speed 128Kbit MRAM core is fabricated with a 0.18-micron logic-based process technology, said to be the smallest size reported to date for MRAM technology. This small base enabled IBM and Infineon to incorporate the smallest MRAM memory-cell size of 1.4 square microns, which is about 20 million times smaller than the average pencil eraser top. By accurately patterning the magnetic structures within this small cell, IBM and Infineon researchers were able to control the memory reading and writing operations.
A memory technology that uses magnetic, rather than electronic, charges to store bits of data, MRAM could significantly improve portable computing products by storing more information, accessing it faster and using less battery power than electronic memory used today. MRAM combines some of the best features of today's common memory technologies: storage capacity and low-cost of dynamic RAM (DRAM), high speed of static RAM (SRAM), and the non-volatility of Flash memory. Since MRAM retains information when power is turned off, products like personal computers using it could start up instantly without waiting for software to "boot up."
Infineon Technologies
Fax 65-6840-0077
www.infineon.com
IBM
Fax 65-6224-5260
www.ibm.com/chips
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