Integrated Silicon Solution recently announced the launch of IS64LV6416AL- and IS64LV1024AL-1Mbit devices, configured as 64Kx16 and 128Kx8 respectively. They offer fast access time of 20ns with a standby current of only 4µA and an operating current of just 12mA.
Targeted at the automotive market, these devices are offered in A1 (-40 to 85ˇC), A2 (-40 to 105ˇC), and A3 (-40 to 125ˇC) automotive temperature ranges.
With a wide data retention voltage range of 1.2 to 3.6V, these SRAMs operate at 2.5V. Similar to ISSI's recently released 8Mbit high-speed asynchronous SRAMs, the 64LV6416AL is fabricated using high-performance 6T 0.15 micron CMOS technology. This process, coupled with ISSI's circuit design techniques, yields high-performance and low-power consumption devices.
Although developed specifically for the automotive market, the devices are also well suited for applications where a combination of high speed and low power is important. Typical applications requiring this combination are networking/broadband and mobile communications.
The x8 (IS64LV1024AL) is available in 36-ball mBGA, and 32-pin TSOP (II) JEDEC standard packages. The x16 (IS64LV6416AL) is available in 48-ball mBGA, and 44-pin TSOP (II) JEDEC standard packages. Samples are available now, with volume production shipments beginning in Q3 2003. The 1Mbit SRAMs are priced at US$2 (10,000).
Integrated Silicon Solution recently announced the launch of IS64LV6416AL- and IS64LV1024AL-1Mbit devices, configured as 64Kx16 and 128Kx8 respectively. They offer fast access time of 20ns with a standby current of only 4µA and an operating current of just 12mA.
