MOSFETs with fast body diode for enhanced ZVS operation

International Rectifier (IR) has introduced the 600V HEXFET power MOSFET family with fast body diode characteristics tailored for soft switching applications such as zero voltage switching (ZVS) circuits. ZVS is a technique used to maximise efficiency and enable higher power output in switch mode power supply (SMPS) circuits in today's high-speed, broad-bandwidth telecommunications and data communications systems.
The fast body diode characteristic in the L Series HEXFET MOSFETs eliminates the need for additional Schottky and HV diodes in ZVS circuits, reducing component count and shrinking space.

The devices enhance system reliability since the internal body diode is active and carries current for a portion of the duty cycle, unlike bridge or power factor correction circuits where the devices are usually hard-switched. The turn on losses are virtually eliminated in ZVS power supply designs by turning on the MOSFETs when its integral body diode is conducting.
The maximum reverse recovery time for the body diodes in the L Series devices is less than 250ns, and even shorter for lower-current devices. This lower reverse recovery period ensures that the integral body diode is completely recovered from a conduction state to a blocking state before a high voltage is applied to the device during turn off operation.
The IRFB16N60L is priced at US$1.59 (10,000).


International Rectifier
Fax 852-2540-5835
www.irf.com