<?xml version="1.0" encoding="iso-8859-1"?><rss version="2.0"><channel><title>EDN India - Memory</title><link>http://www.ednindia.com</link><description>EDN Asia - Memory</description><language>en-US</language><copyright>Copyright 2012 Reed Business Information, a division of Reed Elsevier Inc. All rights reserved.</copyright><pubDate>Sun, 5 Feb 2012 18:51:46 +0800</pubDate><item><description>&lt;a href="http://adclick.g.doubleclick.net/aclk?sa=L&amp;ai=B_DD8n48oT9y1GsuEiAfchoWtBf_esv4CAAAAEAEgn5rRGTgAWMfzg65JYJ2h34HYBbIBD3d3dy5lZG5hc2lhLmNvbboBCWdmcF9pbWFnZcgBCdoBIWh0dHA6Ly93d3cuZWRuYXNpYS5jb20vZ29vZ2FkLmFzcOABAsACAuACAOoCE2VkbmlfcnNzXzYwMHg2MF90b3D4AoHSHoADAZADsAmYA7AJqAMB4AQBoAYe&amp;num=0&amp;sig=AOD64_3su1IwyWMPKcTggAvA50kI90pYAQ&amp;client=ca-pub-6043169582139749&amp;adurl=http%3A%2F%2Fad-apac.doubleclick.net/6k%3Bh%3Dv8/3c0e/2/0/%2a/q%3B251479354%3B0-0%3B0%3B75801778%3B816-600/60%3B45895868/45913106/1%3B%3B%7Esscs%3D%3fhttp://www.digikey.in" target='_blank'&gt;&lt;img src='http://s0.2mdn.net/viewad/2789322/widest_600x60_IN.jpg'/&gt;&lt;/a&gt;</description></item><item><title>Sponsored Link: TI delivers industry's first Class H VDSL line driver  for high-speed networking equipment</title><link>http://www.ednindia.com/rss_bridge.asp?AdID=1303&amp;URL=http://ad-apac.doubleclick.net/clk;239966685;62808611;z?http://www.ti.com/ths6226-pr</link><description>Single device provides lowest power consumption across all VDSL profiles&lt;br/&gt;&lt;br/&gt;TAIPEI (March 18, 2011) – Texas Instruments Incorporated (TI) today introduced the industry’s first Class H VDSL line driver in full production. Compared to Class AB alternatives, the gated, dual-port THS6226 consumes 47 percent less power, a critical requirement for the high-density VDSL applications used in high-speed broadband networks. And by offering a digitally adjustable quiescent current, the THS6226 line driver</description><guid>http://www.ednindia.com/rss_bridge.asp?AdID=1303&amp;URL=http://ad-apac.doubleclick.net/clk;239966685;62808611;z?http://www.ti.com/ths6226-pr</guid><pubDate>Thu, 11 Aug 2011 00:00:00 +0800</pubDate></item><item><title>SanDisk Implements SATA µSSD Spec for Embedded SSDs</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28878&amp;title=sandiskimplementssatassdspecforembeddedssds-Asia.html</link><description>SanDisk Corp. has implemented the new SATA µSSD specification into its iSSD product line of postage stamp-sized embedded SSDs. SATA-IO, an industry consortium dedicated to sustaining the quality, integrity ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28878&amp;title=sandiskimplementssatassdspecforembeddedssds-Asia.html</guid><pubDate>Thu, 11 Aug 2011 00:00:00 +0800</pubDate></item><item><title>DRAM Content in PCs Set for Decline</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28853&amp;title=dramcontentinpcssetfordecline-Asia.html</link><description>The 48-percent average annual increase of dynamic random access memory (DRAM) content in personal computers (PCs) during the past 20-25 years is set for decline, according to market analyst IHS iSuppli, ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28853&amp;title=dramcontentinpcssetfordecline-Asia.html</guid><pubDate>Fri, 5 Aug 2011 00:00:00 +0800</pubDate></item><item><title>Fujitsu Develops SPI FRAM in 0.18&amp;#956;m Technology</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28841&amp;title=fujitsudevelopsspiframin018956mtechnology-Asia.html</link><description>Fujitsu Semiconductor Asia Pte Ltd (FSAL) is now sending out samples of its recently developed SPI FRAM (ferroelectric random access memory) devices to customers. The FRAM ICs, based on Fujitsu’s 0.18&amp;#956;m ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28841&amp;title=fujitsudevelopsspiframin018956mtechnology-Asia.html</guid><pubDate>Thu, 4 Aug 2011 00:00:00 +0800</pubDate></item><item><title>Tablet Teardowns Reveal iPad Design Advantages</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28826&amp;title=tabletteardownsrevealipaddesignadvantages-Asia.html</link><description>In the 15 months since the introduction of the iPad, competitive tablet manufacturers still can’t match the design efficiency of Apple Inc.’s groundbreaking product, according to an IHS iSuppli Teardown ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28826&amp;title=tabletteardownsrevealipaddesignadvantages-Asia.html</guid><pubDate>Wed, 3 Aug 2011 00:00:00 +0800</pubDate></item><item><title>NAND Densities in Gaming Platforms to Reach 923MB in 2011</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28757&amp;title=nanddensitiesingamingplatformstoreach923mbin2011-Asia.html</link><description>Despite the high cost of NAND flash memory, NAND densities in 2011 will rise more than 40 percent in home consoles and handheld devices, the principal modes for gaming entertainment, according to a new ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28757&amp;title=nanddensitiesingamingplatformstoreach923mbin2011-Asia.html</guid><pubDate>Wed, 27 Jul 2011 00:00:00 +0800</pubDate></item><item><title>Ramtron Samples 64kb Serial F-RAM</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28701&amp;title=ramtronsamples64kbserialfram-Asia.html</link><description>Ramtron International Corp. has announced broad sampling of its ferroelectric random access memory (F-RAM) built on its manufacturing line at IBM Corp. The FM24C64C is a 64kb, 5V serial F-RAM device that ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28701&amp;title=ramtronsamples64kbserialfram-Asia.html</guid><pubDate>Thu, 21 Jul 2011 00:00:00 +0800</pubDate></item><item><title>SANRAD Transforms Storage Access</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28699&amp;title=sanradtransformsstorageaccess-Asia.html</link><description>Storage acceleration and virtualization company SANRAD's V-Switch XL storage acceleration appliance provides application-based acceleration over embedded FLASH. SANRAD’s unique approach provides the best ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28699&amp;title=sanradtransformsstorageaccess-Asia.html</guid><pubDate>Thu, 21 Jul 2011 00:00:00 +0800</pubDate></item><item><title>DRAM Price Erosion to Slow Down Next Year</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28694&amp;title=drampriceerosiontoslowdownnextyear-Asia.html</link><description>Slower advancements in semiconductor manufacturing technology this year is expected to result in a deceleration in price reductions for dynamic random access memory (DRAM) next year, according to latest ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28694&amp;title=drampriceerosiontoslowdownnextyear-Asia.html</guid><pubDate>Wed, 20 Jul 2011 00:00:00 +0800</pubDate></item><item><title>iCloud Could Disrupt NAND Flash Memory Market</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28681&amp;title=icloudcoulddisruptnandflashmemorymarket-Asia.html</link><description>Apple Inc. in recent years has played a key role in expanding the market for NAND flash—but the company’s newly launched iCloud storage service could cause demand for the memory to weaken in the future, ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28681&amp;title=icloudcoulddisruptnandflashmemorymarket-Asia.html</guid><pubDate>Tue, 19 Jul 2011 00:00:00 +0800</pubDate></item><item><title>Hynix, Toshiba to Collaborate on MRAM Development</title><link>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28656&amp;title=hynixtoshibatocollaborateonmramdevelopment-Asia.html</link><description>Hynix Semiconductor Inc. and Toshiba Corp. have agreed to a strategic collaboration on the joint development of Spin-Transfer Torque Magnetoresistance Random Access Memory (MRAM), a fast emerging next ....</description><guid>http://www.ednindia.com/gotoArticle/goArticle.asp?mag=EDNI&amp;newscatid=10&amp;id=28656&amp;title=hynixtoshibatocollaborateonmramdevelopment-Asia.html</guid><pubDate>Thu, 14 Jul 2011 00:00:00 +0800</pubDate></item></channel></rss>

